Our A-Z approach helps clients reduce liability and creates efficiencies in managing the supply chain.
Maintaining consistent tool configuration and recipe setup enables more reliable and repeatable film deposition results. In addition to our inhouse film deposition tools and metrology equipment, we connect our clients with process owners globally to provide a comprehensive collection of film deposition services to add to your silicon products.
There is a direct correlation between the starting substrate quality and post film deposition performance. We help our clients understand the effects that specific silicon parameters have on post deposition which will help our clients reduce quality risks and recognize saving opportunities.
Various process methods are used to create layers of dielectric (insulating) and metal (conducting) materials used to build a semiconductor device. The technique used depends on the type of material and structure.
- Plasma-enhanced CVD (PECVD), high-density plasma CVD (HDP-CVD), and atomic layer deposition (ALD) are used to form the critical insulating layers that isolate and protect all electrical structures
- Electrochemical deposition (ECD) creates the copper interconnect in an integrated circuit.
- Tungsten (W)connectors and thin barriers (PVD)are made with chemical vapor deposition (CVD) and atomic layer deposition (ALD), which adds only a few layers of atoms at a time.
- Thermal Oxide (SiO2) is one of the “building block” films used in making both simple and complex semiconductor devices. It can be an excellent dielectric (insulating) thin film. It is normally found on a device as “field oxide” electrically isolating polysilicon, metal, or other conductive thin film(s) from the silicon substrate or “bulk” of the device. It is also found on the device as a “gate oxide”.