DIELECTRIC
FILMS

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DIELECTRIC FILMS

Available sizes
8" | 200 mm
12"| 300 mm

Amorphous Carbon (a-C)
Available Thickness	1000Å-10,000Å	Non Uniformity	<2%
Mean Thickness	±5%	Particles	<100@.09um
Process	PECVD	Process Temp	275°C

SiON (Passivation)
Thickness range	1500Å-10,000Å	Non Uniformity	<2%
Mean Thickness	±5%	Particles	<100@.09um
Process	PECVD	Process Temp	400°C

Silicon Nitride (SiN)
Thickness range	300Å-20,000Å	Non Uniformity	<2%
Mean Thickness	±5%	Particles	<100@.09um
Process Type	PECVD	Process Temp	400°C

Amorphous Silicon (a-Si)
Thickness range	250Å-10,000Å	Non Uniformity	<10%
Mean Thickness	±5%	Particles	<100@.09um
Process type	PECVD	Process Temp	350°C

Silicon Carbide (SiCO & SiCN)
Thickness range	100Å-5,000Å	Non Uniformity	<5%
Mean Thickness	±5%	Particles	<100@.09um
Process Type	PECVD	Process Temp	400°C

Silane Oxide (USG)
Thickness range	2000Å-50,000Å	Non Uniformity	<2%
Mean Thickness	±5%	Particles	<100@.09um
Process Type	PECVD	Process Temp	400°C

Nitrogen Free Anti Reflective Layer (NFARL)
Thickness range	200Å-2,000Å	Non Uniformity	<10%
Mean Thickness	±5%	Particles	<100@.09um
Process Type	PECVD	Process Temp	350°C

HDP Oxide (STI)
Thickness range	2000Å-10,000Å	Non Uniformity	<2%
Mean Thickness	±5%	Particles	<100@.09um
Process Type	PECVD	Process Temp	665°C-675°C

TEOS Oxide
Thickness range	1000Å-40,000Å	Non Uniformity	<2%
Mean Thickness	±5%	Particles	<100@.09um
Process Type	PECVD	Process Temp	400°C

Other films include

Low stress Nitride

Low stress TEOS

BPSG

Black Diamond (low k)

Poly Silicon

LPCVD SiN

I Line Photoresist

DUV Photoresist

*300 mm specs provided, contact us for other diameters